Indium phosphide nanocavity (IMAGE) Optica Caption Researchers developed a new III-V semiconductor nanocavity that confines light at levels below the diffraction limit. The design of the cavity is shown in a, the calculated electric field distribution in b and c, and scanning electron microscopy images in d-f. Credit Meng Xiong, Technical University of Denmark Usage Restrictions None License Original content Disclaimer: AAAS and EurekAlert! are not responsible for the accuracy of news releases posted to EurekAlert! by contributing institutions or for the use of any information through the EurekAlert system.