Electrical characteristics of an amorphous p-type thin-film transistor utilizing tellurium oxide (IMAGE)

Pohang University of Science & Technology (POSTECH)

Electrical characteristics of an amorphous p-type thin-film transistor utilizing tellurium oxide

Caption

Superior output and transmission properties are demonstrated in tellurium oxide-based amorphous p-type thin-film transistors (Se:Te = 1:4) processed with an optimal selenium alloying ratio. The optimized thin-film transistor showcases a hole mobility of 15 cm2/Vs and an on/off current ratio of 107, closely resembling key electrical attributes of early n-type oxide thin-film transistors. Additionally, the thin-film transistor exhibits remarkable stability under prolonged bias stress and uniformity across large-area thin films.

Credit

POSTECH

Usage Restrictions

None

License

Licensed content

Disclaimer: AAAS and EurekAlert! are not responsible for the accuracy of news releases posted to EurekAlert! by contributing institutions or for the use of any information through the EurekAlert system.