The formation mechanism of 2D isolated band features and the sub-thermionic transport performances (IMAGE)
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In the left two figures, the isolated band can be formed through increasing the orbital energy difference or decreasing the orbital overlap between M and X elements. In the right, according to this guide principle, a class of 2D isolated band semiconductors have been identified to achieve sub-60-mV/dec SS in MOSFETs by high-throughput calculations, which provides a novel opportunity for the next-generation energy-efficient 2D nanoelectronics.
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