Variation of (a) sheet carrier density and (b) electron mobility of ScAlN/AlGaN/AlN/GaN heterostructures with growth temperature (IMAGE)

Tokyo University of Science

Variation of (a) sheet carrier density and (b) electron mobility of ScAlN/AlGaN/AlN/GaN heterostructures with growth temperature

Caption

Growth temperature is a critical parameter determining the sheet carrier density of scandium aluminum nitride (ScAlN)-based heterostructures, grown using the sputtering technique.

Credit

Dr. Atsushi Kobayashi from Tokyo University of Science, Japan

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