Figure 1 (IMAGE)

Advanced Institute for Materials Research (AIMR), Tohoku University

Figure 1

Caption

(a) Schematic illustration of memory device consisting of chiral antiferromagnet Mn3Sn / nonmagnetic metal heterostructure (b) A scanning electron microscope image of the fabricated device with Mn3Sn nanodot and nonmagnetic metal channel. 

Credit

Yutaro Takeuchi et al.

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