Rational design principles of relaxor antiferroelectric materials (IMAGE)

Chinese Academy of Sciences Headquarters

Rational design principles of relaxor antiferroelectric materials

Caption

A. Temperature-dependent dielectric permittivity (εr) of an antiferroelectric (AFE) material, with schematic domain structures illustrate at different temperatures; B. The experimental setup for flash heating and flash cooling (FHC), capable of achieving rates up to 1000 °C/s, enabling the synthesis of relaxor AFE films in just one second; C. Comparison of various heat treatment protocols, with treatment times ranging from under 1 second for FHC to over 1000 seconds for conventional annealing (CA); D. P–E hysteresis loops of PbZrO3 films subjected to various annealing processes. The inset shows a 2-inch wafer-scale relaxor AFE film fabricated via FHC.

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IMR

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