Beyond the Silicon Plateau: A Convergence of Novel Materials for Transistor Evolution (IMAGE)
Caption
- This review introduces promising semiconductor materials for future transistors, including two-dimensional van der Waals materials, Mott insulators, halide perovskites, and amorphous oxides, with advantages such as clean interfaces, ultra-thin channels, and defect tolerance.
- These materials, when combined with advanced gate dielectrics and next-generation interconnects, offer synergistic solutions to scaling challenges such as carrier scattering, oxide thickness limitations, and interface degradation.
- The review also discusses reliability concerns including thermal instability and leakage current, and explores future applications in artificial intelligence hardware, in-memory computing, and three-dimensional integration.
Credit
Jung Hun Lee, Jae Young Kim, Hyeon-Ji Lee, Sung-Jin Choi, Yoon Jung Lee*, Ho Won Jang*.
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License
CC BY-NC-ND