Heterointerface-driven photo-electron transport in a VO₂(B)/V₂O₅ microbolometer under lwir illumination (IMAGE)
Caption
Heterointerface-driven photo-electron transport in a VO₂(B)/V₂O₅ microbolometer under lwir illumination. Schematic and experimental evidence illustrating the heterointerface photo-electron effect in a VO₂(B)/V₂O₅ nanocomposite microbolometer. Left: a suspended microbolometer pixel exposed to long-wave infrared (LWIR) radiation. Middle: high-resolution TEM image showing a well-defined interface between V₂O₅ (001) and VO₂(B) (001) nanograins embedded on a SrTiO₃/SiNₓ substrate. Right: corresponding band alignment diagram, where LWIR illumination excites electrons from defect-related states in V₂O₅, enabling their transfer across the interface into the VO₂(B) conduction band. This interface-assisted carrier separation and transport enhances conductivity and sustains high temperature sensitivity at elevated operating temperatures.
Credit
Won Jun Choi, et al
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CC BY-NC-ND