Self-assembled Monolayer-enhanced PbS QD Photodetectors for CMOS Integration (IMAGE)

Tsinghua University Press

Self-assembled Monolayer-enhanced PbS QD Photodetectors for CMOS Integration

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This image illustrates the improved performance of PbS quantum dot photodetectors with self-assembled monolayers (SAMs) as hole transport layers, demonstrating enhanced external quantum efficiency and specific detectivity for CMOS-compatible short-wave infrared imaging.

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Nano Research, Shenzhen Technology University

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