Figure | Induced fit growth of Ga-based semiconductor thin films and multifunctional applications. (IMAGE)
Caption
Figure | Induced fit growth of Ga-based semiconductor thin films and multifunctional applications. a, Optical photograph, and scanning electron microscope image of the as-prepared Ga-based semiconductor film. Good uniformity of 1.8 cm × 1.8 cm and compact surface morphology are demonstrated. b, Schematic diagram of the induced fit growth method for GaSb films. The free metal Ga in the as-exfoliated GaOx film promotes the deposition of vapor atoms, subsequently leading to the island growth of the film. With the prolonged growth duration, the gradually becomes compact and uniform. c, multifunctional applications of as-prepared Ga-based semiconductor thin films. Microscale patterning has been successfully demonstrated in the film. As-constructed thin film transistors confirm the p-type conducting behaviors and increased drain-source current with prolonged growth duration. Moreover, as-constructed thin film transistors can mimic typical synaptic behaviors, such as spike timing-dependent plasticity. On the other hand, a 5 × 5-pixel imaging array is constructed by the as-prepared Ga-based semiconductor thin film, showing precise and uniform imaging results. As-constructed thin film photodetectors all exhibit excellent broadband photodetection ability with different growth duration. In a word, these findings underscore a straightforward and effective strategy for the induced fit growth of multifunctional semiconductor thin films.
Credit
Zai-xing Yang et al.
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CC BY