Twisted bilayer MoTe₂ device and its electric-field-tuned topological moiré flat bands. (IMAGE)

Science China Press

Twisted bilayer MoTe₂ device and its electric-field-tuned topological moiré flat bands.

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(a–b) Schematic of the back-gate tunable tMoTe₂ device encapsulated in hexagonal boron nitride (h-BN). A vertical displacement field is applied between the STM tip and the bottom graphite gate. (c) Under zero electric field, the K-valley moiré flat bands exhibit a topologically non-trivial honeycomb lattice structure. (d) Upon application of a displacement field, the interlayer coupling is modified, and the flat bands transform into a topologically trivial triangular lattice structure.

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