Dipole‑Driven Charge Trapping in Monolayer Janus MoSSe for Ultrathin Nonvolatile Memory Devices (IMAGE)

Shanghai Jiao Tong University Journal Center

Dipole‑Driven Charge Trapping in Monolayer Janus MoSSe for Ultrathin Nonvolatile Memory Devices

Caption

  • Janus MoSSe-based floating-gate memory exhibits ultrafast charge-trapping dynamics and stable charge retention exceeding 108 s under low-voltage operation.
  • The intrinsic out-of-plane dipole moment in Janus MoSSe effectively suppresses leakage current and enlarges the memory window, even with ultrathin h-BN tunneling layers.
  • The proposed all-van der Waals heterostructure provides a scalable platform for high-speed, energy-efficient, and reliable nonvolatile memory applications.

Credit

Eun Bee Ko, Junho Sung, Seon Yeon Choi, Yasir Hassan, Jeong-Ju Bae, Jongseok Kim, Hyun You Kim, Eunho Lee, Min Sup Choi*, Hyun Ho Kim*.

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License

CC BY-NC-ND

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