Figure | Device architecture and optoelectronic characteristics. (IMAGE)

Light Publishing Center, Changchun Institute of Optics, Fine Mechanics And Physics, CAS

Figure | Device architecture and optoelectronic characteristics.

Caption

Figure | Device architecture and optoelectronic characteristics.  a, Schematic illustration and corresponding cross-sectional SEM image of the device, comprising n-type DBRs, a passive cavity, multiple quantum wells, an oxide layer, and p-type DBRs. Scale bar: 5 μm, 500 nm, 200 nm. b, Emission spectra measured at different temperatures (25 °C to 95 °C) under a fixed injection current of 1.4 mA. c, Single-side frequency noise PSD of the proposed VCSEL, compared with state-of-the-art free-running laser sources. The inset shows the corresponding Lorentzian linewidth derived from the PSD, with the dashed line indicating the β-separation line that delineates coherence-dominant noise.

Credit

Aobo Ren et al.

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