Atomistic phase transition dynamics of In₂Se₃ semiconductor triggered by electron beam illumination or heat is controlled and captured by in-situ STEM. (IMAGE)

Tsinghua University Press

Atomistic phase transition dynamics of In₂Se₃ semiconductor triggered by electron beam illumination or heat is controlled and captured by in-situ STEM.

Caption

Atomistic phase transition dynamics of In₂Se₃ semiconductor triggered by electron beam illumination or heat is controlled and captured by in-situ STEM. The newly formed non-layered phase exhibits 6H SiC-type atomic configuration, where the anionic sites are occupied by Se ions and cation sites are occupied by In ions and vacancies.

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Nano Research, Tsinghua University Press

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