The schematic illustration of the proposed mechanism for PbCl2 post-treatment. (IMAGE)

Tsinghua University Press

The schematic illustration of the proposed mechanism for PbCl2 post-treatment.

Caption

PbCl2 post-treatment to Sb2S3/HTL interface could passivate interface defects and reduce non-radiative recombination of Sb2S3 solar cell. Specifically, Cl can passivate the defect of VS and SbS, and Pb enabled effective p-type doping at the Sb2S3 interface with the help of VS removal. And the synergistic effect of Pb and Cl elements matched well with HTL energy level, facilitated hole extraction and enhanced the interface conductivity. The optimal power conversion efficiency of above device reaches 8.05%.

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Nano research, Tsinghua University Press

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