Ultrathin printed GaOx tunneling contacts for high-performance WS2 transistors (IMAGE)

International Journal of Extreme Manufacturing

Ultrathin printed GaOx tunneling contacts for high-performance WS2 transistors

Caption

Printed nanometer-thick gallium oxide films are integrated between metal electrodes and a WS2 channel, forming an efficient tunneling contact that enables low contact resistance and high carrier mobility.

Credit

By Yun Li§, Tinghe Yun§, Wuqing Fang§, Nan Cui*, Bohan Wei, Haoran Mu, Luojun Du, Song Zhang*, Guangyu Zhang* and Shenghuang Lin*

Usage Restrictions

Credit must be given to the creator.

License

CC BY

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