Energy-efficient reconfigurable photodiode based on ferroelectric HfxZr1-xO2 (HZO) and ambipolar semiconductor WSe2 for in-sensor computing. (IMAGE)
Caption
By integrating a sub-20-nm HZO ferroelectric layer with a split-gate architecture, the device achieves polarity-switchable photocurrent under zero external bias. The device supports in-situ visual preprocessing of incident optical signals, such as matrix-vector multiplication. When employed as a physical convolution kernel for simulated edge detection tasks, it produces edge maps nearly indistinguishable from ideal software predictions.
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Nano Research, Tsinghua University Press
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