Realization of wafer-scale epitaxy of RENiO3 for prospect integrated circuit applications. (IMAGE)

Science China Press

Realization of wafer-scale epitaxy of RENiO3 for prospect integrated circuit applications.

Caption

(a) The differential charge density for NdNiO3/Al2O3 (0001) heterostructure from first-principles density functional theory calculations. (b) The polar figure for as-grown NdNiO3/Al2O3 (0001). (c) The high-angle annular dark-field cross section morphologies and selected area electron diffraction patterns for as-grown NdNiO3/Al2O3 (0001). (d) The crystallographic relationship between NdNiO3 and Al2O3. (e) Comparing the resistive switch across various critical temperatures for as-grown RENiO3 on Al2O3 (0001), LaAlO3 (001), SrTiO3 (001) and Al2O3-buffered Si. (f) Formation free energy of RENiO3 in ambient pressure plotted as a function of temperature. (g) Representative images of the as-grown 2-inch and 3-inch NdNiO3. (h–j) Wafer-scale mapping of the metal-insulator transition properties for as-grown 2-inch NdNiO3 film.

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