Epitaxial growth of polar wurtzite niobium aluminum nitride (NbAlN) (IMAGE)

Tokyo University of Science

Epitaxial growth of polar wurtzite niobium aluminum nitride (NbAlN)

Caption

NbAlN expands the family of polar nitride semiconductors compatible with GaN and provides a new option for polarization-based control of interfacial electron density.

Credit

Associate Professor Atsushi Kobayashi from Tokyo University of Science, Japan

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