From Silicon Doping to Atomically Thin Semiconductors (IMAGE)

Graduate School of Engineering, The University of Tokyo

From Silicon Doping to Atomically Thin Semiconductors

Caption

Conventional silicon semiconductors rely on substitutional doping to control electrical conductivity (left). Inspired by this concept, researchers developed a strategy to incorporate carbon atoms into the hexagonal boron nitride (h-BN) lattice during growth (right), transforming an insulating atomic framework into a monolayer boron carbon nitride (BCN) semiconductor with p-type conductivity. This approach opens new opportunities for next-generation ultrathin electronics.

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Vincent Tung, The University of Tokyo

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