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Researchers from the University of Tsukuba have produced a record-breaking polycrystalline germanium (Ge) thin film on a flexible polyimide substrate. Tuning the growth temperature and thickness of the GeOx underlayer gave a Ge film with large crystals and a hole mobility of 690 cm2 V−1 s−1, the highest reported for an insulator-supported semiconductor. The high-performance, flexible material is expected to contribute to the development of electronics for large-scale initiatives such as the internet of things.
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University of Tsukuba
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