Simulation of the filling process of resist material in UV nanoimprint lithography. (IMAGE)

Tokyo University of Science

Simulation of the filling process of resist material in UV nanoimprint lithography.

Caption

In a new study, researchers from TUS, Japan, use molecular dynamics simulations to understand the molecular features of resist materials that makes for better filling of nanometer-sized trenches in the nanopattern mold used in UV nanoimprint lithography.

Credit

Associate Professor Tadashi Ando

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Credit must be given to the creator.

License

CC BY

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