The Si Surface estimation with BHF treatment by LTEM. (IMAGE)
Caption
a, Illustration of THz emission mechanism from Si surface with laser excitation and chemical process on Si surface with BHF etching and surface dipole moment resulting from different electronegativities of surface atoms. The native oxide layer is removed, F-terminated surface is generated as a mid-stage, and the H-terminated surface is formed as the stable condition. b, THz emission waveforms of low-doped n-type Si surface before BHF etching, in F-terminated condition and H-terminated condition. c, LTEM images of the Si sample with a 2.5 mm interval line-space structure of photo resist on the surface after 1% dilute BHF etching for 300 s and removing the photo resist.
Credit
by Dongxun Yang, Abdul Mannan, Fumikazu Murakami, Masayoshi Tonouchi, Yang, D., Mannan, A., Murakami, F.
Usage Restrictions
Credit must be given to the creator.
License
CC BY