Dependence of Auger recombination rate on excited carrier concentration (N) (IMAGE)

Nagoya Institute of Technology

Dependence of Auger recombination rate on excited carrier concentration (N)

Caption

The graph depicts the N dependence of Auger recombination rate for n-type layers with film thickness of 150 μm (T-150) and 250 μm (T-250), a p-type sample with film thickness of 100 μm (P-100), and literature. The dotted line indicates the slope of fitting, which reveals that Auger recombination is somewhat inversely related to N.

Credit

Masashi Kato from Nagoya Institute of Technology

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