Figure 1 | Structure and working principle of the silent-state-enhanced on-chip infrared circular polarization detector. (IMAGE)

Light Publishing Center, Changchun Institute of Optics, Fine Mechanics And Physics, CAS

Figure 1 | Structure and working principle of the silent-state-enhanced on-chip infrared circular polarization detector.

Caption

a, Device structure of an on-chip infrared circular polarization detector based on the metal-MoS2-metal architecture. b, Band diagram of the two metal-MoS2 junctions functioning as two Schottky diodes connected face-to-face; and illustration of hot electron injection. c, SEM image of the device. d, Diagrams of two ordinary integrated circular polarization detectors with integrated left-handed Z-antenna and right-handed Z-antenna, respectively, ultra-high CPER mode and balanced mode; and the corresponding light ellipticity dependent photocurrent plots. e, Comparison of the CPERs of ordinary integrated circular polarization detectors with that of an integrated circular polarization detector dimer in the ultrahigh-CPER mode. f, Contour of NEΔχ (χ, f) based on theoretical analysis.

Credit

by Yonghao Bu, Xiansong Ren, Jing Zhou, Zhenhan Zhang, Jie Deng, Hangyu Xu, Runzhang Xie, Tianxin Li, Weida Hu, Xia Guo, Wei Lu, and Xiaoshuang Chen

Usage Restrictions

Credit must be given to the creator.

License

CC BY

Disclaimer: AAAS and EurekAlert! are not responsible for the accuracy of news releases posted to EurekAlert! by contributing institutions or for the use of any information through the EurekAlert system.