Effect of AlN surface pits on GaN remote epitaxy (IMAGE)

GIST (Gwangju Institute of Science and Technology)

Effect of AlN surface pits on GaN remote epitaxy

Caption

The presence of nano-sized pits on the AlN template surface damages the graphene layer above it at higher temperatures. This changes the growth mode of GaN thin film, making its exfoliation unsuccessful.

Credit

Dong-Seon Lee from Gwangju Institute of Science and Technology

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