Figure 2: Characterizations of the photodetection properties of Ta2NiSe5/SnS2 heterojunction. (IMAGE)

Light Publishing Center, Changchun Institute of Optics, Fine Mechanics And Physics, CAS

Figure 2: Characterizations of the photodetection properties of Ta2NiSe5/SnS2 heterojunction.

Caption

Figure 2: Characterizations of the photodetection properties of Ta2NiSe5/SnS2 heterojunction. a) Optical microscope images of the Ta2NiSe5/SnS2 heterojunction. b) Output curves (IDS-VDS) in dark and under illumination with different power. The incident light is at 532 nm wavelength, and VG =0 V. c) Time-resolved photoresponse of the Ta2NiSe5/SnS2 device at VDS= - 3 V. The incident light is at 532 nm wavelength and VG =0 V. The gray part represents the light pulses applied to the Ta2NiSe5/SnS2 device. d) Band diagrams of the junction under light illumination. e) Transfer curves (IDS-VG) in the dark and under illumination with different power. The incident light is at 532 nm wavelength and VDS = -1 V. f) Responsivity (R) and specific detectivity (D*) at VDS = -3 V under lasers from 375 to 1310 nm.

Credit

Shaojuan Li, Nan Zhang

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