Transport measurement: (IMAGE)
Caption
(a) Schematic of a dual-surface AlOx-encapsulated MnBi2Te4 device. (b) Axion insulator state in an even-layer device: broad zero-Hall plateau and highly insulating longitudinal resistance. (c) QAH effect in an odd-layer device: nearly rectangular hysteresis loops with enlarged coercivity, which is further enhanced by in-plane magnetic fields.
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