Graphical Abstract (IMAGE)

University of Warwick

Graphical Abstract

Caption

Graphical Abstract demonstrating the hole mobility for new material nanometres-thin compressively strained germanium layer epitaxially grown on a silicon substrate. Hole mobility in compressively strained germanium on silicon exceeds 7× 106 cm2V-1s− 1 . Credit: Myronov, M., Bogan, A., & Studenikin, S. (2025). Hole mobility in compressively strained germanium on silicon exceeds 7× 106 cm2V-1s− 1. Materials Today.

Credit

Myronov, M., Bogan, A., & Studenikin, S. (2025). Hole mobility in compressively strained germanium on silicon exceeds 7× 106 cm2V-1s− 1. Materials Today.

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