Ultrathin printed GaOx tunneling contacts for high-performance WS2 transistors (IMAGE)
Caption
Printed nanometer-thick gallium oxide films are integrated between metal electrodes and a WS2 channel, forming an efficient tunneling contact that enables low contact resistance and high carrier mobility.
Credit
By Yun Li, Tinghe Yun, Wuqing Fang, Nan Cui, Bohan Wei, Haoran Mu, Luojun Du, Song Zhang, Guangyu Zhang and Shenghuang Lin
Usage Restrictions
Credit must be given to the creator. Only noncommercial uses of the work are permitted.
License
CC BY-NC