Figure 2 | Mechanism of SAAL (IMAGE)
Caption
Figure 2 | Mechanism of SAAL. a Schematic diagram of ultrafast laser-matter interaction in transparent dielectric crystals. b-d Thermal deposition dominated by phonon thermal conductivity under low-energy (pulse energy=90 nJ) Gaussian spot irradiation, where k1:k2≈1.06 (b); thermal deposition dominated by electronic thermal conductivity under high-energy (pulse energy=180 nJ) Gaussian spot irradiation, where k11:k22≈10 (c); and thermal deposition dominated by electronic thermal conductivity under high-energy anisotropic spot irradiation, achieved with an optical slit (d). Conceptual diagram (left), simulated temperature field (middle), and experimentally produced structure (right). The laser pulse duration is 1 ps. Color bars: 300-1300 K. Scale bars: 2 μm. Red dotted curves indicate the ultrafast laser spot profile in the XY plane. e Theoretically calculated electron density and equilibrium temperature as a function of ultrafast laser pulse energy and pulse duration, respectively. Insets: experimentally produced structures. Scale bar: 5 μm. f Theoretical process window for SAAL. The yellow line marks a conservative pulse duration threshold for inducing significant anisotropic thermal deposition. Color bar: electron density. g Experimental results using the parameters in f.
Credit
Bo Zhang et al.
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