Self-healing behavior and electrical performance of fully stretchable transistors (IMAGE)

Science China Press

Self-healing behavior and electrical performance of fully stretchable transistors

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Self-healing behavior and electrical performance of fully stretchable transistors: (a) AFM image of damaged P3 film. (b) AFM image of healed P3 film. (c) Field-effect mobility of P3 and control samples (P1, P5) under damaged, post-treated, and healed states. (d) Device structure of a fully stretchable transistor (bottom-gate, top-contact). (e) Images of the fully stretchable device at 0% and 150% strain. (f) Electrical parameters vs. strain (parallel to charge transport direction). (g) Mobility vs. stretch-release cycles at 50% strain. (h) Benchmark of P3 against representative literature: mobility vs. crack onset strain.

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