Figure 2 | The electroluminescence and corresponding theoretical oscillator strengths of the proposed active region design (IMAGE)

Light Publishing Center, Changchun Institute of Optics, Fine Mechanics And Physics, CAS

Figure 2 | The electroluminescence and corresponding theoretical oscillator strengths of the proposed active region design

Caption

Figure 2 | The electroluminescence and corresponding theoretical oscillator strengths of the proposed active region design.  Normalized oscillator strengths of optical transitions from the upper lasing levels (levels 4-6) to all lower levels (levels 1-3) are compared with experimentally measured intersubband electroluminescence (EL) spectra at 298 K under an applied bias of 11 V. The inset shows the measured EL spectra of the same device recorded at various applied voltages.

Credit

Bo Meng et al.

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