Figure 2 | CW operation of EL characterization of as-constructed n-PtNPs@ZnO:Ga MW/Pt/MgO/p-GaN heterojunction device. (IMAGE)
Caption
a, Schematic illustrating the cross-section of the laser device architecture based on the n-PtNPs@ZnO:Ga MW/Pt/MgO/p-GaN heterojunction. In the device configuration, ITO and Ni/Au working as electrodes are responsible for the current injection. b, I-V curve of the fabricated single MW heterojunction emission device. Inset: the I-V curves of Ni/Au electrode contacted to the p-type GaN film, and a single PtNPs@ZnO:Ga MW, respectively. c, Current-dependent EL spectra of the as-fabricated single MW based LED, as the injection current is increased from 11.6 to 25.31 mA. d, Variations of the integrated EL intensity and spectral FWHM as a function of injection current, showing a lasing threshold of 11.12 mA. e, EL spectrum via Lorentz fitting at the input current of 21.05 mA, providing the FWHM of the lasing peak δλ ~ 0.18 nm, and the corresponding Q-factor value is calculated to about 2169.
Credit
by Xiangbo Zhou, Mingming Jiang, Kai Xu, Maosheng Liu, Shulin Sha, Shuiyan Cao, Caixia Kan, and Da Ning Shi
Usage Restrictions
Credit must be given to the creator.
License
CC BY