Working principle of the sensing-memory-computing device. (IMAGE)

Light Publishing Center, Changchun Institute of Optics, Fine Mechanics And Physics, CAS

Working principle of the sensing-memory-computing device.

Caption

a, I-V characteristic of a G/M/G device with binary photoresponse switching when the voltage sweeps from 0 to 2 V, from 2 V to -2 V, and back to 0 V. b, Correlation of changes in the ratio of the intensities of Raman scattering and shifts of the G mode of graphene electrodes and states of the non-volatile photoresponse. c, TCAD-simulated dark/photo current of the G/M/G device for LPS, TCAD-simulated electron current densities distribution of low photoresponse state under illumination. d, TCAD-simulated dark/photo current of the G/M/G device for high photoresponse state, TCAD-simulated electron current densities distribution of LPS under illumination.

Credit

by Xiao Fu, Tangxin Li, Bin Caid, Jinshui Miao, Gennady N. Panin, Xinyu Ma, Jinjin Wang, Xiaoyong Jiang, Qing Lia, Yi Dong, Chunhui Hao, Juyi Sun, Hangyu Xu, Qixiao Zhao, Mengjia Xia, Bo Song, Fansheng Chen, Xiaoshuang Chen, Wei Lu, Weida Hu

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