A team from the University of Science and Technology of China of the Chinese Academy of Sciences—working with pure-red PeLEDs— has identified and addressed the root cause of PeLED efficiency loss at high brightness by introducing a novel material design that enables record-breaking device performance.

A recent breakthrough by researchers from the Shanghai Institute of Ceramics of the Chinese Academy of Sciences and Shanghai Jiao Tong University in the warm processing of traditionally brittle semiconductors offers tremendous potential to expand applications for inorganic semiconductors into these fields.