KAIST Unlocks the Secret of Next-Generation Memory​ (IMAGE)

The Korea Advanced Institute of Science and Technology (KAIST)

KAIST Unlocks the Secret of Next-Generation Memory​

Caption

<By combining C-AFM and ESM techniques, the correlation between local conductivity and variations in oxygen vacancy concentration after resistive switching is analyzed. After the electroforming process, regions with increased conductivity exhibit an enhancement in the ESM amplitude signal, which can be interpreted as an increase in defect ion concentration. Conversely, after the reset process, regions with reduced conductivity show a corresponding decrease in this signal. Through these observations, it is spatially demonstrated that changes in conductivity and local defect ion concentration after resistive switching exhibit a positive correlation>

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KAIST

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