KAIST Unlocks the Secret of Next-Generation Memory​ (IMAGE)

The Korea Advanced Institute of Science and Technology (KAIST)

KAIST Unlocks the Secret of Next-Generation Memory​

Caption

<Overview of the Research Process. By using one of the SPM modes, C-AFM (Conductive Atomic Force Microscopy), resistive switching corresponding to the electroforming and reset processes is induced in a 10 nm-thick TiO₂ thin film, and the resulting local current variations caused by the applied electric field are observed. Subsequently, at the same location, ESM (Electrochemical Strain Microscopy) and KPFM (Kelvin Probe Force Microscopy) signals are comprehensively analyzed to investigate and interpret the spatial correlation of ion-electronic behaviors that influence the resistive switching phenomenon>

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KAIST

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