KAIST Solves 3D Memory Reliability Problem with "Oxygen Tunnel" Structure, Boosting AI Chip Performance and Reducing Power Consumption (IMAGE)
Caption
Figure 2. Improved Reliability and Stability of the Oxygen-Tunnel Vertical Channel Transistor, and Its Memory Retention Characteristics
Under positive bias stress (PBS) testing, the device with the oxygen-tunnel structure showed a threshold voltage shift of only about 188 mV, compared to more than 1 V for the conventional structure, confirming that the oxygen-tunnel structure provides superior operational stability. After oxygen supply through the annealing process, defect states associated with oxygen vacancies (sub-gap states) decreased, demonstrating that defects within the oxide channel were effectively suppressed. The oxygen-tunnel vertical channel transistor developed in this study achieved a world-class current density. Memory devices based on the oxygen-tunnel vertical channel transistor also demonstrated superior memory characteristics, achieving both the longest data retention time and the lowest leakage current among previously reported oxide vertical channel memory devices.
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KAIST
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