ETRI-Wavice, localization of core components for AESA radar and SAR satellite
Achieved self-reliance in GaN semiconductor transmit/receive chips, which were previously dependent on imports
image: ETRI-Wavice
Credit: Electronics and Telecommunications Research Institute(ETRI)
Korean researchers have developed localization technology for Gallium Nitride (GaN) monolithic microwave integrated circuits (MMICs) used in transmit/receive modules for military radars and satellites. This achievement is expected to significantly contribute to defense technology self-reliance by enabling the localization of key components not only for military radars but also for high-resolution Synthetic Aperture Radar (SAR) systems.
Electronics and Telecommunications Research Institute (ETRI), in collaboration with Wavice, has developed GaN-based MMICs for transmit/receive operations used in military and SAR radars for the first time in Korea using fab-based technology.
Previously fully dependent on imports, these high-performance military semiconductor components are now developed with domestic technology, and a foundation for mass production at local facilities has been established. This marks a major breakthrough in R&D. The results are expected to bolster national defense autonomy and provide a strong response to export regulations.
The research was promoted as part of the National Research Council of Science & Technology’s (NST) Creative Allied Project beginning in 2023. Through the integration of ETRI’s semiconductor design technology and Wavice’s manufacturing process expertise, three types of X-band transmit/receive chips were successfully developed.
The key components developed include Power Amplifier (PA), Low Noise Amplifier (LNA), and Switch (SW) MMICs.
These components demonstrate performance on par with commercial products from leading foundry nations such as the U.S. and Europe, and are the first results utilizing Korea’s only GaN mass production fab facilities.
Compared to conventional Gallium Arsenide (GaAs)-based products, developed GaN MMICs offer higher output and efficiency, which is expected to dramatically improve the performance of military and satellite communication, especially Active Electronically Scanned Array (AESA) radars.
AESA radar is a state-of-the-art radar technology capable of electronically steering beams to rapidly detect and track targets. It comprises an antenna with multiple transmit/receive modules. Each module integrates a power amplifier to boost transmission signals, a low-noise amplifier to receive signals cleanly, and a switch to toggle between transmit and receive modes.
SAR systems also adopt similar transmit/receive module architectures. GaN semiconductors, with their high power and efficiency, greatly contribute to miniaturization and performance enhancement of such devices.
Therefore, the components developed in this research are expected to significantly improve the performance of X-band military, maritime, and satellite communication radars in Korea and aid in achieving technological self-reliance.
Since 2020, ETRI has accumulated foundational research results on GaN semiconductor technology through its DMC Convergence Research Department. This recent achievement is a follow-up effort conducted in collaboration with Wavice to link it with domestic mass production capabilities.
Dr. Jong-Won Lim, from ETRI‘s RF/Power Components Research Section, stated, “By combining ETRI’s design technology with Wavice’s processing technology, we developed three types of high-performance T/R chips for the first time in Korea. We hope this technology contributes to the localization of radar and satellite components.”
Wavice CTO Yun-Ho Choi added, “With the domestic infrastructure capable of mass-producing GaN semiconductors, we have laid the foundation for the self-reliance of critical defense components. This will greatly support the stable development of such systems.”
The research team plans to accelerate the localization of military semiconductor components that have long depended on foreign products. They have completed the transfer of design technology to Wavice and are preparing for full-scale commercialization.
They have successfully localized GaN-based MMICs for AESA radar T/R modules, including power amplifiers, low-noise amplifiers, and switches, and even developed a single-chip MMIC integrating all these functions.
It represents a valuable convergence research result that builds upon ETRI’s prior work and advances the technological maturity of GaN semiconductor technology for defense applications using Wavice’s foundry capabilities.
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This achievement is part of the NST project titled “Advanced Technology Development and Mass Production for Semiconductor Components in Defense for AESA Radar and SAR Satellites using Domestic Foundry.”