Ultra-low thermal budget and low-voltage operation of the La: HZO FE capacitors. (IMAGE)

Science China Press

Ultra-low thermal budget and low-voltage operation of the La: HZO FE capacitors.

Caption

(a) Current–electric field (I–E) and polarization–electric field (P–E) hysteresis loops for La-doped HZO and conventional HZO capacitors annealed at 300°C. (b) The P-V and dynamic I-V curves of FE capacitor based on HZO film with 0.44% La-doped annealed at different temperatures The 2Pr of capacitors with La: HZO and conventional HZO annealed at (c) 300°C and (d) 350°C. (e) Benchmark plot of 2Pr versus operation field (Eop) for this work and previously reported HZO-based FE capacitors annealed at below 400°C, illustrating the superior energy-efficient memory window and industry-leading performance enabled by precise La doping.

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