Concept of La-doped HZO (La: HZO) FE capacitors enabling low-voltage operation at BEOL-compatible temperatures. (IMAGE)

Science China Press

Concept of La-doped HZO (La: HZO) FE capacitors enabling low-voltage operation at BEOL-compatible temperatures.

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(a) Schematic illustration of the integration challenges in compute/memory/storage systems, highlighting the importance of BEOL-safe thermal budget (≤ 350°C) for embedded non-volatile memory. The proposed strategy employs precisely controlled in-situ La doping, achieving robust ferroelectricity, high remanent polarization (2Pr), and low operation field (Eop) under low-temperature annealing, as compared to conventional HZO. (b) Conceptual comparison between pure HZO and La-doped HZO devices.

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