Filling fault in half‑Heusler compounds: a new kind of planar defect
Peer-Reviewed Publication
Updates every hour. Last Updated: 23-Oct-2026 15:17 ET (23-Oct-2026 19:17 GMT/UTC)
Researchers from Zhejiang University and other institutions conducted a systematic study on intrinsic defects in half-Heusler compounds—a big family of functional materials. They have discovered a new type of planar defect, named “filling fault,” along with the associated vacancy swap occupation. Their work clarifies the long-standing contradiction regarding defect types and atomic occupation in half-Heusler compounds. They elucidate the formation rules of filling faults across different compositions and reveal the mechanisms by which this novel planar defect influences carrier transport and piezoelectric response. These findings offer new perspectives for the design of functional materials.
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