Symmetry-breaking engineered for polarization-sensitive bulk photovoltaic effect in b-As/2H-TMDs heterostructures
Peer-Reviewed Publication
Updates every hour. Last Updated: 24-Oct-2026 03:16 ET (24-Oct-2026 07:16 GMT/UTC)
Researchers have engineered a symmetry-mismatched van der Waals interface by stacking twofold-symmetric black arsenic (b-As) with threefold-symmetric 2H transition-metal dichalcogenides (2H-TMDs). The interface creates directional in-plane polarization and a strong bulk photovoltaic effect (BPVE), allowing devices to generate photocurrent without external bias while distinguishing light polarization. Optimized b-As/WSe2 devices respond across 405–1064 nm and reach 946 mA/W responsivity, 9.28 x 109 Jones detectivity, a 0.95 V−1 BPV coefficient, and a dichroic ratio of 10.82 at 638 nm.
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