Mitigating fermi-level pinning in 2D transistors via reactive phase-transformed contacts
Peer-Reviewed Publication
Updates every hour. Last Updated: 24-Oct-2026 14:17 ET (24-Oct-2026 18:17 GMT/UTC)
Two-dimensional semiconductors could enable highly scaled, low-power electronic devices, but their performance is often limited by damaged metal–semiconductor interfaces and severe Fermi-level pinning. Researchers at Beijing Institute of Technology have developed a reactive phase-transformed contact strategy that protects the semiconductor during metal deposition and subsequently converts the protective layer into a conductive PdTe2 electrode. The approach reduces contact resistance in MoTe2 transistors and restores ambipolar transport in WSe2 devices, offering a scalable pathway toward high-performance 2D electronics.
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