Radiative cooling fabric creates a thermally comfortable environment without energy input, providing a sustainable approach to personal thermal management. However, most currently reported fabrics mainly focus on outdoor cooling, ignoring to achieve simultaneous cooling both indoors and outdoors, thereby weakening the overall cooling performance. Herein, a full-scale structure fabric with selective emission properties is constructed for simultaneous indoor and outdoor cooling. The fabric achieves 94% reflectance performance in the sunlight band (0.3–2.5 µm) and 6% in the mid-infrared band (2.5–25 µm), effectively minimizing heat absorption and radiation release obstruction. It also demonstrates 81% radiative emission performance in the atmospheric window band (8–13 µm) and 25% radiative transmission performance in the mid-infrared band (2.5–25 μm), providing 60 and 26 W m⁻² net cooling power outdoors and indoors. In practical applications, the fabric achieves excellent indoor and outdoor human cooling, with temperatures 1.4–5.5 °C lower than typical polydimethylsiloxane film. This work proposes a novel design for the advanced radiative cooling fabric, offering significant potential to realize sustainable personal thermal management.

Space manipulators play an important role in the on-orbit services and planetary surface operation whose reliability is a key issue. In the extreme environment of space, space manipulators are susceptible to a variety of unknown disturbances. Since it is difficult for the manipulator to be repaired immediately, once it fails, it will mean that it cannot complete the mission as expected, which may cause serious losses and dangers. How to have a resilient guarantee, i.e., the manipulator’s ability to resiliently recover and continue to complete tasks, in failure or disturbance is the core capability of its future development. The motion planning unit is used as the computing terminal of the manipulator’s joint motion trajectory. Compared with traditional motion planning, learning-based motion planning has gradually become a hot spot in current research. However, no matter what kind of research ideas, the single robotic manipulator is studied as an independent agent, making it unable to provide sufficient flexibility under conditions such as external force disturbance, observation noise, and mechanical failure.

An Osaka Metropolitan University-led research team conducted a review that examined the theoretical foundations of Artificial Superintelligence and explored how misaligned AI systems could optimize for wrong objectives, leading to patient harm and systemic failures.

The proliferation of 5G communication technology and the miniaturization of electronic devices have made protection against human electromagnetic radiation an urgent global public health issue. Concurrently, intensifying great power arms races are driving electromagnetic warfare environments towards full-spectrum capabilities and intelligentization. Microwave (300 MHz–300 GHz) and terahertz wave (0.1–10 THz) technologies, as core frequency bands in electromagnetic spectrum engineering, have deeply penetrated critical fields such as communications, military, healthcare, and industrial inspection. Consequently, electromagnetic wave absorption and shielding have become imperative problems to solve. However, traditional absorbing materials face numerous challenges, such as singular loss mechanisms, a lack of adaptive cross-band regulation capability, and excessive thickness. These limitations severely restrict their application in complex electromagnetic compatibility scenarios.

Emerging two-dimensional (2D) semiconductors are among the most promising materials for ultra-scaled transistors due to their intrinsic atomic-level thickness. As the stacking process advances, the complexity and cost of nanosheet field-effect transistors (NSFETs) and complementary FET (CFET) continue to rise. The 1 nm technology node is going to be based on Si-CFET process according to international roadmap for devices and systems (IRDS) (2022, https://irds.ieee.org/), but not publicly confirmed, indicating that more possibilities still exist. The miniaturization advantage of 2D semiconductors motivates us to explore their potential for reducing process costs while matching the performance of next-generation nodes in terms of area, power consumption and speed. In this study, a comprehensive framework is built. A set of MoS₂ NSFETs were designed and fabricated to extract the key parameters and performances. And then for benchmarking, the sizes of 2D-NSFET are scaled to a extent that both of the Si-CFET and 2D-NSFET have the same average device footprint. Under these conditions, the frequency of ultra-scaled 2D-NSFET is found to improve by 36% at a fixed power consumption. This work verifies the feasibility of replacing silicon-based CFETs of 1 nm node with 2D-NSFETs and proposes a 2D technology solution for 1 nm nodes, i.e., “2D eq 1 nm” nodes. At the same time, thanks to the lower characteristic length of 2D semiconductors, the miniaturized 2D-NSFET achieves a 28% frequency increase at a fixed power consumption. Further, developing a standard cell library, these devices obtain a similar trend in 16-bit RISC-V CPUs. This work quantifies and highlights the advantages of 2D semiconductors in advanced nodes, offering new possibilities for the application of 2D semiconductors in high-speed and low-power integrated circuits.