Low-resistance buffer layer that paves the way for vertical GaN devices on silicon
Peer-Reviewed Publication
Updates every hour. Last Updated: 27-Oct-2026 17:16 ET (27-Oct-2026 21:16 GMT/UTC)
NIMS succeeded in developing a technique to form a GaN epitaxial film with extremely low resistance and robust thermal stability, which is essential for realizing vertical gallium nitride (GaN) devices on low-cost silicon (Si) wafers. This novel technique, an “amorphous-like interlayer (AL-IL)” approach, uses an ultrathin film composed of Si and nitrogen (N) to accommodate lattice mismatch between Si and GaN, and enables vertical current flow between the substrate and the GaN film. This achievement constitutes a fundamental technology for fabricating vertical GaN devices on Si wafers, and is expected to contribute to reducing the cost of high-efficiency power devices and micro-LED devices in the future. This research result was published in Advanced Physics Research on May 29, 2026.
Advances in structural biology have allowed scientists to determine molecular structures with atomic‑level detail, sometimes yielding static snapshots that do not reflect the dynamism of proteins. However, these motions are often crucial for biological function. Researchers from the Institute of Science and Technology Austria (ISTA) together with international collaborators have now combined several methods to shed light on how proteins ‘breathe’ and how some experimental techniques freeze their motion. The findings—which could boost protein design approaches and improve AI-based structural prediction tools—were published in Nature Chemistry.
A CUHK-led team has developed an integrated all-optical signal processor (OSP) that corrects signal distortion directly in light form, reducing latency and energy use compared with conventional digital signal processors (DSP). Built on a silicon photonic chip, it can perform real-time signal equalization in the optical domain and achieve 1.6 Tb/s throughput with under 60 picoseconds latency and extremely low power consumption, while flexibly compensating various transmission impairments, including fiber dispersion, system bandwidth limitation, and nonlinearities. Published in Science, the breakthrough offers a high-bandwidth, low-latency, and energy-efficient solution for high-speed AI data centre interconnects and marks progress toward using light for both data transmission and processing.
Some cancer cells evade medicines by switching to a sleep-like state with the help of stress hormone receptors. Researchers have developed a method that allows them to degrade these receptors and therefore bypass the cells’ protective mechanism. To this end, they built a switch that can be turned on and off with light in the vicinity of the tumour and that tags the receptors for disposal. This system is effective against lung cancer in the lab and could also have future applications in breast and prostate cancer.
A method to interpret artificial intelligence (AI) models used in materials discovery by analyzing their learned features has been developed by researchers from Japan. The method extracts key features from an AI model trained on atomic structural data and optical absorption spectra, and then groups materials with similar structural and spectral characteristics. This approach can be extended to reveal how atomic arrangements influence other material properties, paving the way for more efficient materials design.