SiCN over photonics structures
Business Announcement
Updates every hour. Last Updated: 23-Oct-2026 21:16 ET (24-Oct-2026 01:16 GMT/UTC)
SiCN over Photonics Structures is a semiconductor manufacturing technology that improves the performance and reliability of photonic integrated circuits (PICs) through enhanced deposition and optimization of silicon carbon nitride (SiCN) and silicon nitride barrier layers. By selectively modifying these barrier materials over conductive structures, the invention reduces unwanted interactions within photonic devices while improving light-signal transmission. The approach is compatible with existing silicon-based fabrication processes, enabling adoption without major manufacturing changes. Potential applications include telecommunications, high-performance computing, aerospace, defense, automotive, and medical technologies that rely on advanced photonic systems. The patented technology is at TRL 6 and available for licensing.
Harvard researchers have joined a Sandia National Laboratories-led project to create a physics-constrained AI foundation model for studying complex turbulent flows that are important to energy systems.
Researchers developed a nanophotonic processor via monolithicly integrating symmetry-broken quasi-bound states in the continuum (BIC) metasurfaces with GaAs/AlGaAs multiple quantum wells (MQWs). By leveraging light-matter interaction, the leaky mode of quasi-BIC makes the vertical-field light absorption possible in MQW. A nonlinear photoresponse is driven by changing asymmetry parameter, while linear scenario by incident angle and bias voltage. Implementing multifunctional BIC-MQWs into an artificial neural network provides a new hardware paradigm for machine vision applications.