Novel Small Molecule Anabolic Agents for Osteoporosis are synthetic compounds derived from ferutinin, a naturally occurring phytoestrogen, that are being developed to address a major unmet need in osteoporosis treatment. Unlike many existing therapies that primarily slow bone loss, these analogs are designed to both inhibit bone resorption and promote new bone formation. The compounds aim to improve safety, specificity, and effectiveness while potentially enabling oral administration, which could enhance patient adherence compared with injectable anabolic therapies. Potential applications include osteoporosis treatment and hormone-related health conditions affecting peri- and post-menopausal women. The patent-pending technology is currently at the in vitro stage and is available for licensing or collaboration.

Aluminum Nitride, Alumina (Sapphire), and Thick Silicon Nitride Integration into the SUNYRF Quantum Platform is a quantum photonics technology that combines complementary photonic materials into a single integrated platform to support advanced optical devices operating across visible and infrared wavelengths. By incorporating thick silicon nitride, alumina, and aluminum nitride, the platform improves optical confinement, enables enhanced electro-optic and non-linear photonic performance, and supports scalable fabrication of specialized quantum devices. Potential applications include quantum computing, quantum communications, advanced sensing, and integrated photonic circuits. The patent-pending technology has reached TRL 6 and is available for licensing.

The Wafer Scale Bonded Active Photonics Interposer enables wafer-level integration of photonic and electronic components by bonding photonic devices onto an interposer base structure containing through-silicon vias and multilayer metallization. This approach improves alignment, connectivity, scalability, and manufacturing efficiency compared with traditional chip-level integration methods. By supporting high-density optical and electrical interconnections, the technology enhances performance for high-speed data communications, optical networking, and advanced computing architectures. Applications include data center interconnects, telecommunications modules, integrated photonic chips, and optical sensing platforms. The technology is protected by multiple granted international patents and has reached TRL 7, demonstrating performance in a relevant environment.

Integrated Photonics Process on SOI Wafers is an advanced fabrication technology that enhances photonic integrated circuits (PICs) by integrating high-performance germanium photodetectors directly onto silicon-on-insulator (SOI) wafers. The process combines precise waveguide fabrication, low-temperature deposition techniques, and specialized germanium growth and annealing methods to improve photodetector sensitivity, light absorption, and overall optoelectronic performance. Compatible with established semiconductor manufacturing processes, the technology supports scalable production of sophisticated photonic devices for communications, computing, and sensing applications. With five U.S. patents granted and one European patent pending, the technology has reached TRL 8 and is available for licensing.

At first glance, a river without water appears to be a lifeless ecosystem: the riverbed is dry and only a few isolated pools remain. However, beneath the stones, among the sediments or in these pools that retain water, there is intense biological activity. Understanding this hidden biodiversity in dry rivers and disconnected pools is the aim of DRY-Guadalmed, a project that seeks to transform the way in which the ecological status of Mediterranean temporary rivers is assessed during the dry season.

SAN ANTONIO — September 17, 2026 — Southwest Research Institute (SwRI) has developed a new method to determine when sodium-ion (Na-ion) and lithium-ion (Li-ion) battery technologies can provide comparable electrical performance for defined applications.

Fabricating Photonics Structure Conductive Pathways is a photonics manufacturing technology that improves photodetector performance in photonic integrated circuits (PICs) through advanced germanium deposition and annealing processes. By precisely growing germanium within engineered trenches, the method reduces defects commonly associated with buffer layers, lowering reverse leakage current and improving light absorption efficiency. The approach enables higher-quality integration of germanium directly onto silicon substrates, enhancing device performance, reliability, and overall optical signal detection. Applications include telecommunications, data communications, optical sensing, and high-performance computing systems that rely on PIC technology. The patent-pending technology is at TRL 6 and available for licensing.