A research team from Shanghai Jiao Tong University has achieved a groundbreaking feat in quantum materials by growing ultrathin CrTe₂ films on NbSe₂ substrates using molecular beam epitaxy (MBE). They created ultra-thin, stress-engineered structures that exhibit unique magnetic properties at the nanoscale. The study reveals how lattice mismatches induce periodic stress relief, leading to the formation of magnetic edge states that could be manipulated for future quantum technologies. This innovative approach opens new avenues for designing nanoscale spintronic devices and exploring topological quantum phenomena, paving the way for advancements in quantum computing and next-generation magnetic materials.

A team of international scientists headed by Prof. Marco Salvalaglio from TUD – Dresden University of Technology has found out that internal stresses—not just interface energy—play a key role in shaping the microstructure of crystalline materials. These findings challenge classical theories and could improve how we design materials for engineering and technology. The results have recently been published in the scientific journal “Proceedings of the National Academy of Sciences (PNAS)”.